| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device having a transfer electrode exhibiting excellent conductivity with high manufacturing stability. SOLUTION: The solid state imaging device comprises a section performing photoelectric conversion, and a section for transferring signal charge generated from the photoelectric converting section. The transfer section comprises a transfer electrode composed of a polysilicon film 104, and an insulating film, e.g. a silicon nitride film 102 composed of a material having a dielectric constant higher than that of a silicon oxide and covering the bottom face, the upper surface and both side faces of the transfer electrode. A silicon oxide nitride film may be employed in place of the silicon nitride film 102. COPYRIGHT: (C)2005,JPO&NCIPI
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