发明名称 High voltage generator in semiconductor memory device
摘要 A high voltage generator includes a high voltage level detector for comparing a high voltage with a reference voltage and generating an oscillator control signal being a first logic level in response to a comparison result; a clock feedback block for receiving the oscillator control signal and an inverse pumping control signal and keeping an oscillator enable signal in the first logic level for a predetermined period; an oscillator for generating a pumping control signal in response to the oscillator enable signal and outputting the inverse pumping control signal to the clock feedback block, wherein the pumping control signal is periodically toggled; and a charge pumping block for boosting up the high voltage in response to the pumping control signal.
申请公布号 US2005206440(A1) 申请公布日期 2005.09.22
申请号 US20040030748 申请日期 2004.12.22
申请人 DO CHANG-HO 发明人 DO CHANG-HO
分类号 H02M3/07;G05F1/10;G11C5/14;G11C11/407;(IPC1-7):G05F1/10 主分类号 H02M3/07
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