SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To improve element characteristics and reduce cost by optimizing a structure of a clad layer and dopant. SOLUTION: A semiconductor light-emitting device has a first clad layer, comprising a first conductive type of AlGaAsP or AlGaAs; a second clad layer which is located next to the first clad layer comprising a first conductive type of AlGaInP or AlInP and has a thickness of up to 0.5μm; an active layer which is located next to the second clad layer comprising a first or a second conductive type of AlGaInP or GaInP and having a thickness of smaller than 0.1μm; a third clad layer which is located next to the active layer comprising a second conductivity-type AlGaInP or AlInP and a thickness of up to 0.5μm; a fourth clad layer which is located next to the third clad layer comprising a second conductivity-type AlGaAsP or AlGaAs; and a current blocking layer for narrowing the current to the active layer, wherein the dopant of a layer comprising AlGaAs (P) among the P-type clad layers is C, and the dopant of a layer comprising AlGaIn (P) is Be or Mg. COPYRIGHT: (C)2005,JPO&NCIPI