| 摘要 |
PROBLEM TO BE SOLVED: To provide an impurity doping method capable of doping an impurity by a simple process, a short lead time, and low cost equipment. SOLUTION: A silicon substrate 2 is laid on a substrate electrode 1, and a counter electrode 3 is provided oppositely to the substrate electrode 1. A shower electrode 4 and a shower plate 5 are provided on the counter electrode 3, and shower holes 6 are formed through the shower electrode 4 and the shower plate 5 at positions corresponding to each other. Gas is supplied to a gas reservoir 9 from a gas supply system 7 through piping 8, and jetted out through the shower holes 6 to the substrate 2. Plasma is generated between the shower plate 5 and the substrate 2 by supplying high frequency power to the substrate electrode 1 from a high frequency power supply 10 so that the surface of the semiconductor substrate 2 can be brought into an amorphous state. COPYRIGHT: (C)2005,JPO&NCIPI
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