| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and circuit for driving a field-effect transistor (FET) capable of stabilizing a drain current. SOLUTION: An FET includes an organic semiconductor layer 3, an insulator layer 2 in contact with the organic semiconductor layer 3, a gate electrode G sandwiching the insulator layer 2 together with the organic semiconductor layer 3, a source electrode S and a drain electrode D electrically connected by a channel formed in the organic semiconductor layer 3 in accordance with the potential of the gate electrode G. In the driving method, auxiliary potential is applied to the gate electrode G before applying driving potential to the gate electrode G. Thus, a drain current can be stabilized. Namely, when applying the driving potential, the drain current I<SB>D</SB>rapidly rises and variations of the drain current I<SB>D</SB>with the passage of time after rising are reduced so that the drain current is stabilized. COPYRIGHT: (C)2005,JPO&NCIPI
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