| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallizing method and a crystallizing system which form a semiconductor crystal grain of a desired size at a desired position on a substrate with remarkably good reproducibility, and is preferable to a mass-production system. SOLUTION: In the crystallizing method, various kinds of system parameters which are inherently included in the crystallizing system are obtained as an optimum condition for crystallization, the system parameters obtained are stored and saved so that these may be read out, a recipe is input, the system parameters are read out according to the input recipe, the crystallizing system is controlled by the system parameters read out, a laser beam is irradiated to the processed substrate from the controlled crystallizing system, a non-single crystal semiconductor film is crystallized, and the crystal grain is caused to grow in a lateral direction. COPYRIGHT: (C)2005,JPO&NCIPI
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