SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND PORTABLE ELECTRONIC APPARATUS PROVIDED THEREWITH

摘要

PROBLEM TO BE SOLVED: To improve the degree of freedom in the design of the shape, constitution and circuit constitution of an element to be formed, in a semiconductor device where the element is formed on the side wall of island-like semiconductor layers. SOLUTION: Two or more island-like semiconductor layers comprising first and second island-like semiconductor layers are formed on the same substrate. At least the first semiconductor layer has level differences on its side wall so that the cross sectional areas of cross sections parallel to the surface of the substrate may be different in stages with respect to a height in a vertical direction. In the second semiconductor layer, the presence/absence of the level differences at the side wall or the number of the level differences are different from those of the first semiconductor layer. The first and second semiconductor layers are provided with elements on each part of the side walls divided by the level differences and at a side wall having no level difference. COPYRIGHT: (C)2005,JPO&NCIPI