发明名称 HALL ELEMENT, MAGNETIC SENSOR AND MAGNETISM DETECTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a Hall element capable of detecting magnetism with higher precision by controlling offset voltage, and to provide a magnetic sensor and a magnetism detection method. SOLUTION: On the L2-L2 line on the surface of an N type semiconductor layer 12 grown epitaxially on a P type semiconductor substrate 11, a set of electrodes 15a, 15b and a set of electrodes 15c, 15d are arranged alternately and symmetrically with respect to the L1-L1 line. Horizontal magnetic field component on the surface of the substrate (wafer) is detected while replacing the set of electrodes for supplying a drive current and the set of electrodes for detecting Hall voltage. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259803(A) 申请公布日期 2005.09.22
申请号 JP20040066020 申请日期 2004.03.09
申请人 DENSO CORP 发明人 OHIRA SATOSHI;BAN TAKAHISA
分类号 G01R33/07;H01L43/06;H01L43/08;(IPC1-7):H01L43/08 主分类号 G01R33/07
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