| 摘要 |
A field effect transistor (FET) and related manufacturing method are disclosed, wherein an active region of a semi-conductor substrate is embossed by a first trench structure. A second trench structure and filling shallow trench insulator laterally defines the active region. Sidewalls of the trenches forming the first trench structure descend to a bottom face with a positive sloped, such that the intersection of the respective sidewalls with the bottom face form an obtuse angle.
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