发明名称 |
Dual-damascene interconnects without an etch stop layer by alternating ILDs |
摘要 |
A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.
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申请公布号 |
US2005208753(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20050131740 |
申请日期 |
2005.05.17 |
申请人 |
OTT ANDREW;WONG LAWRENCE;MORROW PATRICK;LEU JIHPERNG;KLOSTER GRANT M |
发明人 |
OTT ANDREW;WONG LAWRENCE;MORROW PATRICK;LEU JIHPERNG;KLOSTER GRANT M. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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