发明名称 Dual-damascene interconnects without an etch stop layer by alternating ILDs
摘要 A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.
申请公布号 US2005208753(A1) 申请公布日期 2005.09.22
申请号 US20050131740 申请日期 2005.05.17
申请人 OTT ANDREW;WONG LAWRENCE;MORROW PATRICK;LEU JIHPERNG;KLOSTER GRANT M 发明人 OTT ANDREW;WONG LAWRENCE;MORROW PATRICK;LEU JIHPERNG;KLOSTER GRANT M.
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L21/476 主分类号 H01L21/768
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