发明名称 |
Methods of forming materials within openings, and methods of forming isolation regions |
摘要 |
In one aspect, the invention includes a method of forming a material within an opening, comprising: a) forming an etch-stop layer over a substrate, the etch-stop layer having an opening extending therethrough to expose a portion of the underlying substrate and comprising an upper corner at a periphery of the opening, the upper corner having a corner angle with a first degree of sharpness; b) reducing the sharpness of the corner angle to a second degree; c) after reducing the sharpness, forming a layer of material within the opening and over the etch-stop layer; and d) planarizing the material with a method selective for the material relative to the etch-stop layer to remove the material from over the etch-stop layer while leaving the material within the opening.
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申请公布号 |
US2005208730(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20050115833 |
申请日期 |
2005.04.25 |
申请人 |
MOORE JOHN T;BLALOCK GUY T |
发明人 |
MOORE JOHN T.;BLALOCK GUY T. |
分类号 |
H01L21/3105;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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