摘要 |
A semiconductor device is supported by a substrate with a smaller lattice constant. A metamorphic buffer provides a transition from the smaller lattice constant of the substrate to the larger lattice constant of the semiconductor device. In one application, the semiconductor device has a lattice constant of between approximately 6.1 and 6.35 angstroms, metamorphic buffer layers include Sb (e.g., AlInSb buffer layers), and the substrate has a smaller lattice constant (e.g., Si, InP or GaAs substrates). |
申请人 |
SCIENCE & TECHNOLOGY CORPORATION @ UNM;LESTER, LUKE, F.;DAWSON, LARRY, R.;PEASE, EDWIN, A. |
发明人 |
LESTER, LUKE, F.;DAWSON, LARRY, R.;PEASE, EDWIN, A. |