A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surface of the substrate, and annealing the allow and the substrate. The annealing temperature is less than 1000°C. The 3-component metal alloy can include Ni, Ti and Pt.
申请公布号
WO2005086567(A2)
申请公布日期
2005.09.22
申请号
WO2005IB01457
申请日期
2005.03.15
申请人
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;CHI, DONGZHI;LEE, TEK, PO, RINUS;CHUA, SOO JIN