发明名称 SILICIDE FORMED FROM TERNARY METAL ALLOY FILMS
摘要 A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surface of the substrate, and annealing the allow and the substrate. The annealing temperature is less than 1000°C. The 3-component metal alloy can include Ni, Ti and Pt.
申请公布号 WO2005086567(A2) 申请公布日期 2005.09.22
申请号 WO2005IB01457 申请日期 2005.03.15
申请人 AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;CHI, DONGZHI;LEE, TEK, PO, RINUS;CHUA, SOO JIN 发明人 CHI, DONGZHI;LEE, TEK, PO, RINUS;CHUA, SOO JIN
分类号 H01L21/336;H01L21/44;H01L21/8234 主分类号 H01L21/336
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