METHOD FOR DETECTING RESISTIVE BRIDGE DEFECTS IN THE GLOBAL DATA BUS OF SEMICONDUCTOR MEMORIES

摘要

There is a method (300) for detecting resistive bridge defects in the global data bus (GDB) of a semiconductor memory having N Z-blocks. In an example embodiment, a plurality of data sets (310) with a predetermined test pattern is provided. The plurality of data sets is used to perform (320) write and read operations to at least a predetermined memory position within a Z-block of the N Z-blocks such that each data set is applied to each of the at least a predetermined memory position. To sensitize weak bridge defects (105), the write and read operations of the same data sets to the same memory locations are repeated. (330) consecutively for at least four times. These steps are repeated for all Z­blocks of the memory. Resistive bridge defects are detected in the GDB of the memory in a way that covers substantially all possible locations for bridge defects (105) as well as weak bridge defects, while substantially reducing test complexity and time.