| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of improving the take-out efficiency of light emitted from an active layer, and further, capable of reducing an operating voltage by preventing the warpage or the like of a substrate and improving ohmic properties of a p-type contact layer and a positive electrode, by a method wherein a semiconductor film is employed as a positive electrode and recesses and projections are formed on the surface of the p-type contact layer. <P>SOLUTION: The semiconductor light emitting element is provided with the positive electrode formed on the p-type semiconductor layer through the p-type contact layer, and the recesses and projections are formed on the surface of the p-type contact layer while the positive electrode is constituted of the semiconductor film comprising at least one kind of an element selected from a group composed of zinc, indium, tin and magnesium. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
