INTEGRATED CIRCUIT STRUCTURE ON HYBRID CRYSTAL ORIENTATION SUBSTRATE AND FORMATION METHOD THEREFOR (HIGH-PERFORMANCE CMOS SOI DEVICE)

摘要

PROBLEM TO BE SOLVED: To provide a high-performance CMOS SOI device on a hybrid crystal orientation substrate. SOLUTION: An integrated circuit structure provided with a substrate having at least two types of crystal orientation is disclosed. The first type of transistor is located on the first part of the substrate having an crystal orientation of the first type, and the second type of transistor is located on the second part of the substrate having an crystal orientation of the second type. There is a distortion generating layer on the transistors of the first and second types. Further, the distortion generating layer can distort on the first type of transistor, and get eased up on the second type of transistor. COPYRIGHT: (C)2005,JPO&NCIPI