| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the generation of a void in thin width wiring and preventing the disconnection of the wiring, in a wiring structure wherein wirings having different wiring widths are connected to each other in the same wiring layer. SOLUTION: The semiconductor device is equipped with wide wiring 11 formed on a semiconductor substrate so as to have a wide wiring width (a), and the thin wiring 12 formed on the same wiring layer as the wide width wiring 11 so as to have a thin wiring width (b) thinner than 0.2μm. The wide wiring 11 is connected to the thin wiring 12 at the part of wiring width (a) and the part of wiring width (b) while a ratio (a/b) of the wiring width (a) to the other wiring width (b) is set so as to be smaller than 10. COPYRIGHT: (C)2005,JPO&NCIPI |
