| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image device capable of preventing opaque impurities from remaining on a photodiode area. SOLUTION: The CMOS image device having a pixel array area containing at least one MOS transistor comprising a photodiode area, a floating dispersion area, a gate and a junction area, a CMOS logic area comprising a plurality of nMOS transistors and pMOS transistors is disposed in an outer frame of the pixel array area, a contact stud comprising a polysilicon film in which the impurities are doped is formed on the floating dispersion area in the pixel array area and the junction area. This does not allow the residue for forming a metal contact stud to remain in the photodiode area. COPYRIGHT: (C)2005,JPO&NCIPI
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