| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device having a novel configuration, without degradation in characteristics and reliability due to heat generated when used, and being capable of withstanding the use with high power, and to provide a method for manufacturing the same. SOLUTION: In the compound semiconductor device, including a contact structure 106 consisting of a plurality of layers provided on a semiconductor multilayer 120 and an electrode 109 provided on the contact structure 106, a layer 106c on the side closest to the electrode 109 among the plurality of layers of the contact structure 106 is made of In<SB>x</SB>Ga<SB>1-x</SB>As (0.9≤X≤1); and the heat generated in the semiconductor multilayer 120 is dissipated to the outside via the contact structure 106 and the electrode 109. COPYRIGHT: (C)2005,JPO&NCIPI
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