发明名称 HEAT TREATMENT APPARATUS AND SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus in which an increase in oxygen concentration in the treatment apparatus can be surely suppressed. SOLUTION: Seven gas-blowing nozzles 68 are arranged on the upper face of a transportation arm 60. Each gas-blowing nozzle 68 is connected to a gas-feed pipe 67, and the gas-feed pipe 67 is connected to a nitrogen-gas feed unit 20 via a valve 69. When the valve 69 is opened while a wafer is held on the transportation arm 60, an nitrogen gas from the nitrogen-gas supply unit 20 is fed to blow the nitrogen gas to the entire space between the substrate W held and the transportation arm 60. By feeding the nitrogen gas between the substrate and the transportation arm 60 before transporting the substrate into a chamber 15, room air interposed between the two can be replaced with the nitrogen gas, and as a consequence, the introduction of the room air into the chamber 15 by the transportation arm 60 is prevented to surely suppress an increase in oxygen concentration in the chamber 15. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005260152(A) 申请公布日期 2005.09.22
申请号 JP20040072748 申请日期 2004.03.15
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 HAYASHI TOYOHIDE;NISHIDA MASAKI
分类号 H01L21/31;C23C16/00;(IPC1-7):H01L21/31 主分类号 H01L21/31
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