| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processor for improving the uniformity in the substrate surface of a substrate processor. SOLUTION: This substrate processor is provided with at least two treatment furnaces 202 and 137 and a substrate placing means for placing a wafer 200 in each treatment furnace, wherein the treatment of the substrate by one treatment furnace 202 is ended. The wafer 200 is carried in the other treatment furnace 137 so as to be treated, and the treatment of the wafer 200 is carried out by one treatment furnace 202. In this case, the direction of the wafer 200 to the substrate placing means of the wafer 200 when the wafer is treated by one treatment furnace 202 in advance, and the direction of the wafer 200 to the substrate placing means when the wafer is treated by the other treatment furnace 202 afterwards, are made different from each other by rotating the wafer 200 by the other treatment furnace 137. COPYRIGHT: (C)2005,JPO&NCIPI
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