Solid-state imaging device

摘要

A solid-state imaging device provided by stacking a photoelectric conversion element is provided with a semiconductor substrate having a signal readout circuit and a photoelectric conversion element stacked on the semiconductor substrate, an incident light is photoelectrically converted to a signal according to the light quantity by the photoelectric conversion element and read out by the signal readout circuit, and the photoelectric conversion element is composed of a first deposition layer comprising a p-conductive quantum dot and an i-conductive quantum dot, and a second deposition layer comprising an n-conductive quantum dot and an i-conductive quantum dot