发明名称 |
Plasma processing apparatus and control method thereof |
摘要 |
There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.
|
申请公布号 |
US2005205208(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20050060547 |
申请日期 |
2005.02.18 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SAGAE NAOTO;TSUCHIYA HIROSHI;HIGASHIURA TSUTOMU;KATO HIDEO;OHTANI RYUJI |
分类号 |
H05H1/46;C23C16/505;C23F1/00;H01J37/32;H01L21/3065;(IPC1-7):C23F1/00 |
主分类号 |
H05H1/46 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|