发明名称 Plasma processing apparatus and control method thereof
摘要 There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-frequency powers respectively to the upper and the lower electrode; and an output controller for raising each of outputs from the high-frequency power supplies at least three times in a stepwise manner up to each of set levels for processing the object to be processed. The output controller adjusts each of rising times of the outputs from the high-frequency power supplies so that an output of the second high-frequency power supply is raised earlier than an output of the first high-frequency power supply while the outputs from the high-frequency power supplies are raised up to the set levels in a stepwise manner.
申请公布号 US2005205208(A1) 申请公布日期 2005.09.22
申请号 US20050060547 申请日期 2005.02.18
申请人 TOKYO ELECTRON LIMITED 发明人 SAGAE NAOTO;TSUCHIYA HIROSHI;HIGASHIURA TSUTOMU;KATO HIDEO;OHTANI RYUJI
分类号 H05H1/46;C23C16/505;C23F1/00;H01J37/32;H01L21/3065;(IPC1-7):C23F1/00 主分类号 H05H1/46
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