AMORPHOUS OXIDE AND THIN FILM TRANSISTOR

摘要

An amorphous oxide and a thin film transistor using the amorphous oxide. More specifically, an amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> and a thin film transistor using the amorphous oxide. The thin film transistor is provided with a source electrode (6), a drain electrode (5), a gate electrode (4), a gate insulating film (3) and a channel layer (2). As the channel layer (2), the amorphous oxide having an electron carrier concentration of less than 10<18>/cm<3> is used.