| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with an insulating film of a high dielectric constant. <P>SOLUTION: The semiconductor device is provided with a substrate and an amorphous insulating layer formed on the substrate. The amorphous insulating layer is expressed by the following composition formula (1) including the interatomic bond of a fluorite type or a defective fluorite type tetragonal crystal or a cubical crystal Hf<SB>(1-x)</SB>R<SB>x</SB>N<SB>y</SB>O<SB>(2-δ)</SB>(1). However, R is selected from a group composed of Y, Ce, Mg, Ca, Lu, Yt, Tm, Er, Ho, Dy, Ho, Tb, Gd, Eu, Sm, Nd, Pr, and La. δ is a value which compensates a valence number, x and y are positive values to satisfy the following relation on an xy plane, namely, y≥0.121-(0.121/0.034)x, y≤0.184-(0.184/0.143)x. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
