发明名称 DEVICE AND METHOD FOR CHEMICAL MECHANICAL POLISHING
摘要 <P>PROBLEM TO BE SOLVED: To provide a device and a method for CMP by which the state of a metallic layer left on the surface of a wafer being polished can be detected in real time. <P>SOLUTION: The device for CMP is provided with a platen 1 which has a polishing pad 5 on its surface and rotates, and a wafer holding mechanism 8 which rotates while the mechanism 8 holds the wafer 7 having the metallic layer on its surface in a state where the mechanism 8 presses the wafer 7 against the polishing pad 5 and polishes the wafer 7. The platen 1 and polishing pad 5 are transparent. The device is also provided with an illuminating means 12 which illuminates the surface of the wafer 7 being polished through the platen 1 and polishing pad 5 and an image pickup device 11 which takes the picture of the surface of the wafer 7 being polished through the platen 1 and pad 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259770(A) 申请公布日期 2005.09.22
申请号 JP20040065503 申请日期 2004.03.09
申请人 TOKYO SEIMITSU CO LTD 发明人 MATSUSHITA OSAMU
分类号 B24B49/02;B24B37/013;B24B37/12;B24B37/20;B24B37/24;B24B49/12;H01L21/304 主分类号 B24B49/02
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