| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polymer excellent in solubility in solvents and heat resistance and a composition thereof, to provide a fine pattern-manufacturing method using the polymer, and to provide a polymer useful, in the manufacture of a semiconductor resist pattern, for adjusting adhesion properties between an antireflection film applied on a substrate and the resist, and a coating material for the antireflection film. <P>SOLUTION: The polymer contains a constituting unit represented by formula (1) (wherein R<SP>1</SP>is a hydrogen atom or a methyl group) and at least one constituting unit selected from the group consisting of a constituting unit represented by formula (2-1) (wherein R<SP>21</SP>is a hydrogen atom or a methyl group) and a constituting unit represented by formula (2-2) (wherein R<SP>22</SP>is a hydrogen atom or a methyl group). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
