发明名称 FILM STRIPPER
摘要 PROBLEM TO BE SOLVED: To eliminate an excessive film and deposit which will be formed in a square shape substrate periphery and a square shape substrate-end in a short time. SOLUTION: Plasma formed under atmospheric pressure is sprayed from the substrate upper and lower sides (two directions), film removal of the round edge of a substrate 10 is performed, and furthermore, vacuum is performed from substrate-end side. Reaction vessels 15a, 15b to which plasma is sprayed have a profile (part of which is bend) in which plasma is sprayed slantingly to a substrate surface. In this film stripper, a substrate can be also held perpendicularly or slantingly to a horizontal plane. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005260015(A) 申请公布日期 2005.09.22
申请号 JP20040070051 申请日期 2004.03.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SUGAWARA AKIRA
分类号 B08B7/00;H01L21/027;H01L21/28;H01L21/288;H01L21/304;H01L21/3065;H01L29/423;H01L29/49;(IPC1-7):H01L21/306 主分类号 B08B7/00
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