| 摘要 |
PROBLEM TO BE SOLVED: To simplify the connection formation of a floating gate and a control gate of a selection gate transistor. SOLUTION: This nonvolatile semiconductor memory is provided with a plurality of memory cell transistors Q<SB>cn</SB>, Q<SB>c(n-1)</SB>, Q<SB>c(n-2)</SB>and so on having a first floating gate 81, a first control gate 121 and a first inter-gate insulating film 71 arranged between the first floating gate and the first control gate; an element separation region 28 arranged at a fixed pitch in a word line WL direction with a stripe-shaped pattern in the bit line BL direction; and a selection transistor arranged at the end of the array of the plurality of memory cell transistors, and equipped with a second floating gate 82, a second control gate 122, a second inter-layer insulating film 72 arranged between the second floating gate and the second control gate, and a side wall gate 6 connecting the second floating gate to the second control gate. COPYRIGHT: (C)2005,JPO&NCIPI
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