FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a field effect transistor which can simply be manufactured, and represents field effect mobility and an on/off ratio since having excellent crystallinity and orientation. SOLUTION: This field effect transistor has an organic semiconductor layer. The organic semiconductor layer contains at least a porphyrin compound and maximum diffraction intensity I1in an area where a CuKαX ray diffraction Bragg angle (2θ) ranges from 9.9°to 10.4°is higher than maximum diffraction intensity I2in an area of 23.0°to 26.0°. COPYRIGHT: (C)2005,JPO&NCIPI