| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of enhancing the precision of a resistance ratio without causing an increase in the size of a chip. SOLUTION: The semiconductor device has a multilevel metallization structure formed on a silicon substrate 1, and a plurality of thin film resistor elements 5 and 6 are arranged on a layer upper than a metal line 3 in the multilevel metallization structure. In the planar structure, the plurality of thin film resistor elements 5 and 6 are arranged at positions equidistant from the metal line 3. COPYRIGHT: (C)2005,JPO&NCIPI
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