| 摘要 |
A semiconductor memory device includes a first wiring layer, a second wiring layer, a memory cell, and a contact plug. The first wiring layer is formed in an interlayer insulating film. The second wiring layer is formed on the interlayer insulating film. The memory cell includes a first ferromagnetic film formed on the second wiring layer, a tunnel barrier film formed on the first ferromagnetic film, and a second ferromagnetic film formed on the tunnel barrier film. The contact plug is formed on the first wiring layer and connects the first wiring to the second wiring layer, and the upper surface of the contact plug is in a position higher than that of the second wiring layer.
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