发明名称 Interdigitated capacitor and method for fabrication therof
摘要 A capacitor for use within a microelectronic product employs a first capacitor plate layer that includes a first series of horizontally separated and interconnected tines. A capacitor dielectric layer separates the first capacitor plate layer from a second capacitor plate layer. The second capacitor plate layer includes a second series of horizontally separated and interconnected tines horizontally interdigitated with the first series of horizontally separated and interconnected tines. The capacitor is formed employing a self-aligned method and the capacitor dielectric layer is formed in a serpentine shape.
申请公布号 US2005206469(A1) 申请公布日期 2005.09.22
申请号 US20040804899 申请日期 2004.03.19
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN WEN-CHIN;TANG DENNY;LAI LI-SHYUE;CHANG CHUNG-LONG;CHEN CHUN-HON
分类号 H01L23/522;H01P1/36;(IPC1-7):H01P1/36 主分类号 H01L23/522
代理机构 代理人
主权项
地址