发明名称 |
Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites |
摘要 |
Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.
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申请公布号 |
US2005205871(A1) |
申请公布日期 |
2005.09.22 |
申请号 |
US20040929226 |
申请日期 |
2004.08.30 |
申请人 |
HALLIN CHRISTER;LENDENMANN HEINZ |
发明人 |
HALLIN CHRISTER;LENDENMANN HEINZ |
分类号 |
C30B19/12;C30B25/02;C30B25/10;C30B25/18;C30B29/36;H01L21/04;H01L21/20;H01L21/205;(IPC1-7):H01L31/031 |
主分类号 |
C30B19/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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