| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heteroepitaxial growth method whereby the good quality fine crystal of a gallium nitride excelling in its luminous quality can be formed on a quartz or silicon substrate. <P>SOLUTION: The growth method is the one for performing a heteroepitaxial growth of a gallium nitride on the surface of a quartz substrate 10 or a silicon substrate 10. The method has a process A for nitrifying the surface of the substrate 10, and has a process B for accumulating or vapor depositing thereafter one or more atomic layers of gallium elements on the surface of the substrate 10. Alternatively, the growth method is the one for performing a heteroepitaxial growth method on the surface of the quartz substrate 10, and has the process B for accumulating or vapor depositing one or more layers of gallium elements. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
