| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having low on-resistance, a low leak current, and high resistance to pressure. SOLUTION: The semiconductor device comprises a silicon carbide semiconductor substrate 100 including an n-type silicon carbide substrate 1, and an n-type silicon carbide epitaxial layer 2 having lower impurity density than the silicon carbide substrate 1; a hetero semiconductor region 3 including an n-type polycrystalline silicon that forms a heterojunction with the silicon carbide semiconductor substrate 100, a first gate electrode 5 disposed adjacent to the heterojunction region formed by the silicon carbide epitaxial layer 2 and hetero semiconductor region 3 via a first gate dielectric 4, a second a conductivity type and p-type silicon carbide 6 disposed to have a portion opposing the first electrode 5 via the first gate dielectric 4 and hetero semiconductor region, and to come in contact with the hetero semiconductor region 3; a source electrode 8 to come in contact with the hetero semiconductor region 3; and a drain electrode 9 to come in contact with the silicon carbide semiconductor substrate 100. COPYRIGHT: (C)2005,JPO&NCIPI
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