Polymer, resist composition and patterning process

摘要

A polymer comprising repeat units of formulae (1) to (3) increases a dissolution rate in an alkali developer under the action of an acid. R¹, R² and R⁵ are H or CH₃, R³ and R⁴ are H or OH, and X is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.