<p>Disclosed is an antireflective film with high antireflection effects which does not cause intermixing with the photoresist and can be used in a lithography process wherein a short-wavelength light such as an F2 excimer laser (wavelength: 157 nm) or an ArF excimer laser (wavelength: 193 nm) is used. Also disclosed is a composition for forming such an antireflective film. The antireflective film-forming composition is characterized in that it is composed of a solid content and a solvent and the proportion of sulfur atoms in the solid content is 5-40 mass%. The solid content includes a polymer containing at least 5 mass% of sulfur atoms and the like.</p>
申请公布号
WO2005088398(A1)
申请公布日期
2005.09.22
申请号
WO2005JP04554
申请日期
2005.03.15
申请人
NISSAN CHEMICAL INDUSTRIES, LTD.;HIROI, YOSHIOMI;KISHIOKA, TAKAHIRO;NAKAYAMA, KEISUKE;SAKAMOTO, RIKIMARU