Fabrication of copper interconnect of semiconductor device, by depositing barrier layer along bottom and sidewalls of trench and via hole, and depositing tantalum/tantalum nitride layer over substrate including copper interconnect

摘要

Fabrication of a copper interconnect of a semiconductor device comprises: depositing a barrier layer (21) along a bottom and sidewalls of a trench and via hole; and depositing tantalum/tantalum nitride layer over a substrate including a copper interconnect. Fabrication of a copper interconnect of a semiconductor device comprises: depositing a first insulating layer (20) on a substrate having a predetermined structure(s); forming a trench and via hole through the first insulating layer using a dual damascene process; depositing a barrier layer along the bottom and sidewalls of the trench and via hole; forming a copper interconnect by filling the trench and via hole with copper and performing a planarization process; depositing a tantalum (Ta)/tantalum nitride (TaN) layer over the substrate including the copper interconnect; removing some portion of Ta/TaN layer, so that the Ta/TaN layer remains only on the copper interconnect; depositing a second insulating layer (25) over the substrate including the Ta/TaN layer; forming a via hole through the second insulating layer by removing some portion of the second insulating layer; and filling the via hole with a conductive material to complete a via (26).