| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma process apparatus capable of giving different plasma energy according to the kind of gas for plasma treatment. <P>SOLUTION: The invention comprises a gas supply portion for supplying gas G1 and G2 for plasma treatment to a vacuum container 50 and a plasma generation portion 15 for generating plasma in the vacuum container 50. In a plasma CVD apparatus 60 for applying the plasma treatment to a deposition substrate 2 in the vacuum container 50, the plasma generation portion 15 is provided on a position away from the deposition substrate 2 such that a plurality of plasma regions 10a and 10b different in region area are formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
