发明名称 |
BIASING CIRCUITS, SOLID-STATE IMAGING DEVICES, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a biasing circuit capable of outputting a bias voltage having stable characteristics, a solid-state imaging device comprising the same, and a method of manufacturing the same. SOLUTION: A biasing circuit includes at least one transistors connected in series between a first electric potential and a second electric potential and a nonvolatile memory element and is configured to obtain bias voltage at a contact point between the transistors and the nonvolatile memory element. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005260940(A) |
申请公布日期 |
2005.09.22 |
申请号 |
JP20050061641 |
申请日期 |
2005.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
LYU JEONG-HO;NAM JUNG-HYUN;ROH JAE-SEOB |
分类号 |
H01L27/146;H01L21/822;H01L21/8247;H01L23/58;H01L27/04;H01L27/115;H01L27/148;H01L29/788;H01L29/792;H04N5/335;H04N5/372;(IPC1-7):H04N5/335;H01L21/824 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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