| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the negative temperature characteristic of a resistance element that uses a polycrystalline silicon film is improved, and variations in resistance value and reduction in reproducibility are suppressed, and to provide a manufacturing method for the same. SOLUTION: The semiconductor device has two layers of polycrystalline silicon film wiring on a silicon substrate 1 thereof. One layer is provided with a resistance element 14b and a bottom electrode 14a of a capacity element, the other layer provided with a top electrode 21a of a capacity element. Upper surfaces of the resistance element 14b and bottom electrode 14a of the capacitance element are covered with ONO films 20a, 20b, respectively, with sides covered with silicon oxide films 19a, 19b. Then, they are subjected to high temperature heat treatment. This prevents impurities introduced into the resistance element from diffusing outward, and facilitates the activation of the impurities and the growth of crystal particles. COPYRIGHT: (C)2005,JPO&NCIPI
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