SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device for establishing both the suppression of resistance variations due to breaking of a silicide layer on a gate electrode and the suppression of variations in a junction leak current flowing from a source region and a drain region formed as impurity regions to a well, and to provide a manufacturing method thereof. SOLUTION: The semiconductor device is provided with the gate electrode 107a, a source-drain region 112 formed on both side regions of the gate electrode 107a, a first silicide layer 106 formed on the gate electrode 107a, and a second silicide layer 114 formed on the source-drain region 112. Oxygen atoms 117 are introduced only to the second silicide layer 114 as a nonmetal element other than the elements configuring a semiconductor substrate 101. COPYRIGHT: (C)2005,JPO&NCIPI