发明名称 TRANSFER METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a transfer method which avoids deterioration of a thin-film device such as a thin-film transistor formed on a transferred layer in a transfer method of the transferred layer, to provide a manufacturing method of a semiconductor device, and to provide an electronic apparatus. SOLUTION: The method to transfer the transferred layer formed on a substrate to other base materials comprises: a first step to form a first isolation layer on the substrate; a second step to form the transferred layer including the thin-film device and a recess on the first isolation layer; a third step to form a protective layer at a region in which at least the recess of the transferred layer is formed; and a fourth step to bond the substrate on which the protective layer is formed to the other base materials through an adhesive layer. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259984(A) 申请公布日期 2005.09.22
申请号 JP20040069519 申请日期 2004.03.11
申请人 SEIKO EPSON CORP 发明人 KODAIRA YASUAKI
分类号 H01L27/12;H01L21/02;H01L21/336;H01L29/786;(IPC1-7):H01L27/12 主分类号 H01L27/12
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