| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-definition semiconductor substrate where the crystal defect of a single crystal semiconductor layer caused by the difference of a grating constant and a coefficient of thermal expansion is reduced. SOLUTION: After forming a large number of protrusion 2 in the state of micro-tablelands on the upper surface of a single crystal semiconductor substrate 1, a buffer layer 3 is laminated on the upper surface of the single crystal semiconductor layer, and a single crystal semiconductor layer 4 of a kind different from the single crystal semiconductor layer is laminated on the buffer layer for manufacturing the semiconductor substrate. COPYRIGHT: (C)2005,JPO&NCIPI
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