发明名称 |
MANUFACTURING METHOD AND PLATING LIQUID OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of the semiconductor device capable of embedded wiring without bringing about a faulty connection derived from the progress in microfabrication. SOLUTION: The embedded wiring by electrolytic plating is materialized by using such a plating liquid that a metal may be used whose ionization tendency is higher than that of metal used as wiring material, and its metal concentration may be made small. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005259959(A) |
申请公布日期 |
2005.09.22 |
申请号 |
JP20040068984 |
申请日期 |
2004.03.11 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
HAMADA MASAICHI |
分类号 |
C25D3/38;C25D5/34;C25D5/48;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):H01L21/288 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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