发明名称 MANUFACTURING METHOD AND PLATING LIQUID OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the manufacturing method of the semiconductor device capable of embedded wiring without bringing about a faulty connection derived from the progress in microfabrication. SOLUTION: The embedded wiring by electrolytic plating is materialized by using such a plating liquid that a metal may be used whose ionization tendency is higher than that of metal used as wiring material, and its metal concentration may be made small. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005259959(A) 申请公布日期 2005.09.22
申请号 JP20040068984 申请日期 2004.03.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAMADA MASAICHI
分类号 C25D3/38;C25D5/34;C25D5/48;C25D7/12;H01L21/288;H01L21/768;(IPC1-7):H01L21/288 主分类号 C25D3/38
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