| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state image pickup device which makes the device fine and reduces the number of white blemishes. SOLUTION: An N-type transistor, a photodiode, a transfer gate electrode and a detection capacity part are formed on a semiconductor substrate. A metal film where silicide can be formed is formed so that it is brought into contact with a part of those in above. Thermal treatment is performed once or a plurality of times. A silicide layer is formed in a part which is brought into contact with the metal film so as to manufacture the solid-state image pickup device. A maximum temperature T in thermal treatment is set to T2 or above and T1 or below. T1 is a minimum temperature at the time of thermal treatment at which a rise of electric resistance due to flocculation is caused in the silicide layer when the silicide layer is formed in an N-type region. T2 is a minimum temperature at the time of thermal treatment at which the rise of electric resistance due to flocculation is caused in the silicide layer when the silicide layer is formed in a P-type region. COPYRIGHT: (C)2005,JPO&NCIPI
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