| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method in which an etching rate and a vertical processability are high. SOLUTION: An etching device comprises an upstream-side electrode 8 provided in the upstream side of a plasma generating chamber 1, a downstream-side electrode 2 which is provided facing the upstream electrode 8 for extracting ions 12 from a plasma 15 and has a plurality of apertures 13 for neutralizing the ions 12, and a processing chamber 4 provided on the downstream-side of the downstream-side electrode 2 for retaining a substrate to be processed 6. This method etches Si materials by using the etching device. This method comprises the steps of generating the plasma 15 in the plasma-generating chamber 1 by pulse modulation discharge by using a mixed gas of Cl<SB>2</SB>and SF<SB>6</SB>; and applying a DC voltage to the upstream electrode 8 and applying high-frequency power to the downstream-side electrode 2, to pass positive and negative ions 12 extracted from the plasma 15 through the apertures 13 to generate high-speed neutral particle beams 5, to etch the substrate to be processed 6 with the high-speed neutral particle beams 5. COPYRIGHT: (C)2005,JPO&NCIPI
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