| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a diode array is formed together with a bipolar transistor and which can improve the yield of an element by preventing the occurrence of crystal defects generated in the cross pattern of a deep trench region, and to provide a method of manufacturing semiconductor device. SOLUTION: The semiconductor device is provided with a LOCOS oxidized film 140 which separates a plurality of diodes 150 in the X-direction and deep trenches 130 which separate the diodes 150 in the Y-direction. The deep trenches 130 are formed deeper than a high-concentration layer 120 buried under the collector layer 121 of the bipolar transistor. It is also possible to use shallow trenches instead of the LOCOS oxidized film 140. COPYRIGHT: (C)2005,JPO&NCIPI
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