| 摘要 |
PROBLEM TO BE SOLVED: To provide a single crystal production apparatus which is one for growing a single crystal by pulling a seed crystal from a melt, wherein single crystals can be produced in improved productivity by preventing crack by controlling the temperature of a crystal by realizing a heat-insulation material structure suited for growth and a heat-insulation structure suited for cooling, which are incompatible with each other, in a continuous growth process and to provide a single crystal production method. SOLUTION: In a method for producing a single crystal by heating a melt in a crucible, bringing a seed crystal into contact with the melt, and pulling the seed crystal from the melt, the single crystal production apparatus has a mechanism for continuously and automatically or manually adjusting the opening degree of the upper opening of a refractory and a mechanism for simultaneously controlling the opening degree of the opening and the output from a high-frequency electric source. The single crystal production method is also provided. COPYRIGHT: (C)2005,JPO&NCIPI
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